第一句（为了看着方便我把它拆成一句一句得了）：There is a certain voltage VGS at which the hole population immediately under the oxide-silicon interface will be identical to that deep within the bulk of the crystal.
2：Under such conditions,a bang diagram representing conditions from the interface to the interior of the P-type silicon crystal would have perfectly horizontal band edges.
3：This magic gate-bias value is termed the flat-band voltage,VGS=VFB,and is valuable as a conceptual starting poing.
4：When the gate terminal is now made more positive with respect to source ,the band edges begin to bend near the oxide-silicon interface.
5：This matter will be examined in detail.
6：At the moment,what is important is that potential ys at the surface of the silcon crystal is becoming more positive through the influence of the fild plate.
7：Hole density at the interface declines and electron density rises.
8：This is dictated by the law of mass action,pn=ni^2,because the silicon remains at equilibrium.
9：The reason for the caveat is that any leakage current through the oxide is accompanied by a net current in the silicon that violates equilibrium.
10：But the superb insulating qualities of SiO>2（这个是二氧化硅）-resistivity in excess of 10^15 ohm.cm-make a vanishing concern at present.

这是完整版的There is a certain voltage VGS at which the hole population immediately under the oxide-silicon interface will be identical to that deep within the bulk of the crystal.Under such conditions,a bang diagram representing conditions from the interface to the interior of the P-type silicon crystal would have perfectly horizontal band edges.This magic gate-bias value is termed the flat-band voltage,VGS=VFB,and is valuable as a conceptual starting poing.When the gate terminal is now made more positive with respect to source ,the band edges begin to bend near the oxide-silicon interface.
This matter will be examined in detail.At the moment,what is important is that potential ys at the surface of the silcon crystal is becoming more positive through the influence of the fild plate.
Hole density at the interface declines and electron density rises.This is dictated by the law of mass action,pn=ni^2,because the silicon remains at equilibrium.The reason for the caveat is that any leakage current through the oxide is accompanied by a net current in the silicon that violates equilibrium.But the superb insulating qualities of SiO>2-resistivity in excess of 10^15 ohm.cm-make a vanishing concern at present.
可能有些地方打错了见谅啊。在这先谢谢了。

http://translate.google.cn/#zh-CN 谷歌翻译

将英语译成中文(简体)
有一定的电压VGS下立即在哪个氧化硅界面孔的人口将在本crystal.Under这种情况下，代表着一声巨响图从界面条件的P室内大部分一样，即深型硅晶体将完全水平带edges.This魔术栅极偏压值又被称为平带电压的VGS= VFB和作为一个概念出发poing.When门码头现在就作出更积极的宝贵源泉，乐队开始弯曲边缘附近的氧化硅界面。
这个问题将审查在detail.At目前，最重要的是，在晶体表面的silcon正在成为潜在伊苏通过fild板更积极的影响。
洞界面电子密度下降，密度是出于rises.This由质量作用定律，镍的pn=^2，因为硅在为警告equilibrium.The原因仍然是，任何通过氧化层泄漏电流是伴随着在违反equilibrium.But在10^ 15 ohm.cm，使目前是多余的担忧消失精湛的二氧化硅绝缘“2高阻硅素质净流动
谷歌翻译不给力啊，看不懂翻译的这是什么

工科的翻译不行啊....=。=

能看懂，但专业性太强了。。。。
不好翻

专业技术文献只能找人翻译的，翻译软件不给力！

谢谢各位，有道神码的不好使啊，翻译的不通顺，我看不明白整理的语句惨不忍睹啊。。
           谢谢各位了。。。。。。

我了个擦的，老师给的每人几页纸，我哭，，，一本书让他给拆了。。。
我还是个英文盲

。。。能懂。。但是不好翻。。。
专业性太强了。
我无力。。

来个有力的

1.在某个电压（VGS)下，即刻暴露在硅氧界面的整个群体会和深藏硅晶体本体内部的完全一致。
2.在这种情况下，代表P型硅晶体从表面到内部情况的价带图像会呈现一种完美的水平边缘价带形式
3.这个神奇的阀偏值电压（？？？）被称为平价带电压VFB或VGS, 十一个具有突破性的概念。

十一个=是一个

谢谢16楼

4.由于材料的原因，阀终端（？？）变得越来越阳性化，价带边缘在硅氧界面附近开始弯曲。
5.这一现象将会从细节上进一步检测。
我快吐血了。。。这不是听的会议纪录吧？到底是HOLE还是WHOLE?

我看了一下确实是hole

FILD PLATE是什么？