*$
**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FQD2N100
** Nc-Channel QFET MOSFET
** 1000V,1.6A, 9ohm
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FQD2N100 2 1 3
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Ebreak 11 7 17 7 1100
Lgate 1 9 1.126e-9
Ldrain 2 5 1.035e-9
Lsource 3 7 1.035e-9
RLgate 1 9 11.26
RLdrain 2 5 10.35
RLsource 3 7 10.35
Rgate 9 6 0.5
It 7 17 1
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=9.75e-4 TC2=-1.04e-6)
.MODEL DbodyMOD D (IS=3.25e-13 N=1 RS=2.82e-2 TRS1=1.5e-3 TRS2=1.0e-6
+ CJO=4.15e-10 M=0.62 VJ=0.45 TT=5.50e-7 XTI=1 EG=1.08)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1.0e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 7.06
.MODEL RdrainMOD RES (TC1=7.52e-3 TC2=1.85e-5)
M_BSIM3 16 6 7 7 Bsim3 W=1.03 L=2.0e-6 NRS=1
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0
+ TOX=1480e-10 XJ=1.4e-6 NCH=1.33e17
+ U0=700 VSAT=5.0e5 DROUT=1.0
+ DELTA=0.10 PSCBE2=0 RSH=2.1e-3
+ VTH0=4.068 VOFF=-0.1 NFACTOR=1.1
+ LINT=1.06e-7 DLC=1.06e-7 FC=0.5
+ CGSO=1.01e-15 CGSL=0 CGDO=2.22e-12
+ CGDL=4.69e-10 CJ=0 CF=0
+ CKAPPA=0.006 KT1=-1.47 KT2=0
+ UA1=-2.02e-8 NJ=10)
*.ENDS
*************** Power Discrete MOSFET Thermal Model ********************
** Package: D-PAK
**----------------------------------------------------------------------
.SUBCKT FQD2N100_THERMAL TH TL
CTHERM1 TH 6 1.050e-4
CTHERM2 6 5 4.020e-4
CTHERM3 5 4 1.760e-3
CTHERM4 4 3 8.020e-3
CTHERM5 3 2 4.280e-2
CTHERM6 2 TL 2.050e-1
RTHERM1 TH 6 4.380e-3
RTHERM2 6 5 1.880e-2
RTHERM3 5 4 8.580e-2
RTHERM4 4 3 4.070e-1
RTHERM5 3 2 9.510e-1
RTHERM6 2 TL 1.033e+0
.ENDS FQD2N100_THERMAL
.ENDS
**-------------------------------------------------------------------------------
** Creation: Nov.-16-2017 Rev.: 1.0
** ON Semiconductor
*$
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