According to the China Machine Tool Industry Association special committee of silicon carbide abrasives Expert Committee by the end of 2012, global production capacity of 2.6 million tons of silicon carbide above , production capacity reached 10,000 tons more than 13 countries , accounting for 98 of the world's total production capacity . Which China silicon carbide production capacity reached 2.2 million tons , accounting for 84 % of the world 's total capacity. Overall , China's silicon carbide smelting production process, technical equipment and energy consumption per tonne reached world leading level. Black, green silicon carbide level of quality is also an original piece of world class .
At the same time , silicon carbide semiconductor industry recognized " one kind of future materials," There is a vast potential for development in the new century a new type of semiconductor material. Rapid development and is expected to have significant results appear in the next 5 to 10 years. The main factors contributing to the development of a silicon carbide (SI) loading the material has reached the limit , the performance of silicon semiconductor device and the substrate capacity limit has been no breakthrough in space. Today, even though China has made great achievements in the production of silicon carbide , silicon carbide power devices but development has been lagging behind .
Reported that China's first mass production of silicon carbide power devices , the formation of a breakthrough in the field of semiconductors in the United States , Europe, Japan led . Industry experts point out that this breakthrough is expected to ease China 's energy crisis.
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